Javier del Pino, Sunil L. Khemchandani, Sergio Mateos-Angulo, Daniel Mayor-Duarte, Mario San-Miguel-Montesdeoca, “Area Efficient Dual-Fed CMOS Distributed Power Amplifier”. Electronics MDPI. August 2018, vol. 7, no 8, p. 139. ISSN: 2079-9292.
Abstract:
Different causes of the gate leakage origin in AlGaN/GaN HEMTs on Si have been studied through numerical simulations. Based on DC measured results and employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed.
Autors: Javier del Pino, Sunil L. Khemchandani, Sergio Mateos-Angulo, Daniel Mayor-Duarte, Mario San-Miguel-Montesdeoca.
Publisher: Electronics MDPI
ISSN: 2079-9292
DOI: 10.3390/electronics7080139
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