XXXIII Conference on Design of Circuits and Integrated Systems (DCIS). Oral. “A Ku-Band SSB Subharmonically Pumped Mixer designed using a 100nm GaN-on-Si process,”. M. San-Miguel-Montesdeoca, D. Mayor-Duarte, S. Mateos-Angulo, S.L. Khemchandani and J. del Pino. 14-16 de noviembre de 2018, Lyon.
Abstract:
This paper presents a Ku-band single-sideband mixer (SSB). The design is based on subharmonically pumped IQ mixers (SHP), designed using a GaN on Silicon process of the French foundry OMMIC. The mixer uses an in-phase Wilkinson divider for the LO, two SHP mixers implemented using antiparallel diode pairs (APDPs) and a 90° combiner for the RF signal. To minimise the area of the circuits, the quasi-lumped technique was applied to the design. The mixer was designed to provide an output RF frequency range between 13.75-14.5 GHz. The mixer occupies an area of 2268μm x 1408μm, with a conversion loss of 21.18 dB and a sideband rejection of 29.32 dBc.
Autors: M. San-Miguel-Montesdeoca, D. Mayor-Duarte, S. Mateos-Angulo, S.L. Khemchandani and J. del Pino.
Published in: XXXIII Conference on Design of Circuits and Integrated Systems (DCIS)
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