R. Rodríguez, B. González, J. García, A. Núñez, “Numerical simulation for DC Schottky gate leakage current in AlGaN/GaN HEMTs”, 12th Spanish Conference on Electronic Devices, Salamanca (Madrid, Spain), 14 – 16 Nov 2018.l
Abstract:
Different causes of the gate leakage origin in AlGaN/GaN HEMTs on Si have been studied through numerical simulations. Based on DC measured results and employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed.
Autors: R. Rodríguez ; B. González ; J. García ; A. Núñez ; G. Toulon ; F. Morancho.
Published in: 2018 Spanish Conference on Electron Devices (CDE)
Publisher: IEEE
ISSN: 2163-4971
DOI: 10.1109/CDE.2018.8596883
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